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| RB050PS-30 Diodes Schottky barrier diode RB050PS-30 External dimensions (Unit : mm) Applications Rectifying small power (8) (7) (6) (5) Land size figure 1pin mark 1.4 00.1 50.1 0.50.05 60.1 4.7 1.1 0.75 4.56 0.15 0.90.03 Features 1) High power mold type. (TSOP8) 2) Low IR 3) High reliability 1.5 0.50.05 1.1 0.40.05 0.1 (1) (2) (3) (4) 0.22 0.05 0.90.05 1.27 0.635 50.1 0.5 0.1 1.27 0.65 3.9 1.25 0.20.03 0.010.01 3.1 TSOP8 0.3 ROHM : TSOP8 Construction Silicon epitaxial planar Manufacture Date Taping dimensions (Unit : mm) 2.00.05 4.00.1 8.00.1 1.550.1 0 1.750.05 0.370.1 0.15 Structure 5.50.05 1PIN 1.550.05 6.40.1 8.00.1 1.20.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature (*1)Tc=100max Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 3 35 150 -40 to +150 Unit V V A A Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.425 200 Unit V A Conditions IF=3.0A VR=30V 5.40.2 Rev.A 9.50.1 12.00.3 6.6 1/3 RB050PS-30 Diodes Electrical characteristic curves 10 Ta=125 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=75 Ta=25 0.1 Ta=-25 0.01 Ta=150 1000000 100000 Ta=75 Ta=25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 1000 100 10 1 0.1 0.001 0 100 200 300 400 500 600 0.01 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=150 Ta=125 10000 f=1MHz 1000 Ta=-25 100 430 Ta=25 IF=3A n=30pcs 300 250 200 150 100 50 AVE:39.2uA Ta=25 VR=30V n=30pcs 1700 1690 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1680 1670 1660 1650 1640 1630 1620 1610 AVE:1639.8pF Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 410 400 AVE:404.1mV 390 380 VF DISPERSION MAP REVERSE CURRENT:IR(uA) 420 0 IR DISPERSION MAP 1600 Ct DISPERSION MAP 300 250 200 150 100 AVE:105.0A 50 0 IFSM DISRESION MAP 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 30 25 20 AVE:20.4ns 15 10 5 0 trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2 Mounted on epoxy board IM=100mA IF=1.5A 100 1000 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1.5 FORWARD POWER DISSIPATION:Pf(W) 100 1ms time 300us Rth(j-a) D=1/2 1 Sin(180) DC 100 10 Rth(j-c) 0.5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0.1 10 1000 0 0 1 2 3 4 5 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.A 2/3 RB050PS-30 Diodes 5 10 0A 0V t 6 DC T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=15V Tj=150 8 10 0A 0V t 6 DC 4 D=1/2 Sin(180) T Io VR D=t/T VR=15V Tj=150 3 D=1/2 2 DC AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:P R (W) 8 Sin(180) 4 D=1/2 1 2 Sin(180) 2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 30 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 150 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 20 AVE:23.8kV 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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